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absolute maximum ratings t a = 25c unless otherwise noted symbol parameter ratings units v dss drain-source voltage -20 v v gss gate-source voltage 12 v i d drain current - continuous (note 1a) -2 a - pulsed -10 p d power dissipation for single operation (note 1a) 0.5 w (note 1b) 0.46 t j , t stg operating and storage junction temperature range -55 to +150 c thermal characteristics r ja thermal resistance, junction-to-ambient (note 1a) 250 c/w r jc thermal resistance, junction-to-case (note 1) 75 c/w package outlines and ordering information device marking device reel size tape width quantity FDN342P FDN342P 7 ?? 8mm 3000 units
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electrical characteristics t a = 25 c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = -250 a -20 v ? bv dss ? t j breakdown voltage temperature coefficient i d = -250 a,referenced to 25 c -16 mv/ c i dss zero gate voltage drain current v ds = -16 v, v gs = 0 v -1 a i gssf gate-body leakage current, forward v gs = 12 v, v ds = 0 v 100 na i gssr gate-body leakage current, reverse v gs = -12 v, v ds = 0 v -100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = -250 a -0.6 -1.05 -1.5 v ? v gs(th) ? t j gate threshold voltage temperature coefficient i d = -250 a,referenced to 25 c 3 mv/ c r ds(on) static drain-source on-resistance v gs = -4.5 v, i d = -2 a v gs = -4.5 v, i d = -2 a,t j =125 c v gs = -2.5 v, i d = -1.5 a 0.062 0.086 0.099 0.08 0.14 0.13 ? i d(on) on-state drain current v gs = -4.5 v, v ds = -5 v -5 a g fs forward transconductance v ds = -5 v, i d = -5 a 7 s dynamic characteristics c iss input capacitance 635 pf c oss output capacitance 175 pf c rss reverse transfer capacitance v ds = -10 v, v gs = 0 v f = 1.0 mhz 75 pf switching characteristics (note 2) t d(on) turn-on delay time 20 35 ns t r turn-on rise time 8 16 ns t d(off) turn-off delay time 9 18 ns t f turn-off fall time v dd = -10 v, i d = -1 a v gs = -4.5 v, r gen = 6 ? 19 32 ns q g total gate charge 6.3 9 nc q gs gate-source charge 1.5 nc q gd gate-drain charge v ds = -10 v, i d = -2 a v gs = -4.5 v, 1.7 nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -0.42 a v sd drain-source diode forward voltage v gs = 0 v, i s = -0.42 a (note 2) -0.7 -1.2 v

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" 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = -2.0a v gs = -4.5v 0 2 4 6 8 0.4 1.4 2.4 3.4 -v gs , gate to source voltage (v) -i d , drain current (a) t a = -55 o c 25 o c 125 o c v ds = -5v 0 0.1 0.2 0.3 12345 -v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = -1a t a = 125 o c t a = 25 o c 0 5 10 15 20 012345 -v ds , drain-source voltage (v) -i d , drain-source current (a) v gs = -4.5v -2.5v -3.5v -3.0v -2.0v -4.0v 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , body diode forward voltage (v) -i s , reverse drain current (a) t a = 125 o c 25 o c -55 o c v gs = 0v 0.8 1 1.2 1.4 1.6 1.8 2 0 4 8 12 16 20 - i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs = -2.5v -3.5v -4.5v -3.0v -4.0v

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0.0001 0.001 0.01 0.1 1 10 100 300 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 t , time (sec) transient thermal resistance r (t) = r(t) * r r = 270 c/w duty cycle, d = t /t 1 2 ja ja ja t - t = p * r (t) ja a j p(pk) t 1 t 2 r(t), normalized effective 1 single pulse d = 0.5 0.1 0.05 0.02 0.01 0.2 0 4 8 12 16 20 0.0001 0.001 0.01 0.1 1 10 100 1000 single pulse time (sec) power (w) single pulse r ja =270 o c/w t a =25 o c 0 1 2 3 4 5 02468 q g , gate charge (nc) -v gs , gate-source voltage (v) i d = -2a v ds = -5v -10v -15v 0.01 0.1 1 10 100 0.1 1 10 100 -v ds , drain-source voltage (v) -i d , drain current (a) dc 10s 1s 100ms 10ms 1ms v gs = -4.5v single pulse r ja = 270 o c/w t a = 25 o c r ds(on) limit 0 200 400 600 800 1000 0 5 10 15 20 -v ds , drain to source voltage (v) capacitance (pf) c iss c rss c oss f = 1mhz v gs = 0 v
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